- 您现在的位置：买卖IC网 > Sheet目录490 > NTMD4884NFR2G (ON Semiconductor)MOSFET N-CH 30V 3.3A 8-SOIC
NTMD4884NF
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter MOSFET & Schottky
Junction-to-Ambient – Steady State (Note 1)
Junction-to-Ambient – t ≤ 10 s Steady State (Note 1)
Junction-to-FOOT (Drain) Equivalent to R q JC
Junction-to-Ambient – Steady State (Note 2)
Symbol
R q JA
R q JA
R q JF
R q JA
Max
79
54
50
163
Unit
° C/W
1. Surface-mounted on FR4 board using 1 inch sq pad size, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
30
24
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 24 V
T J = 25 ° C
T J = 125 ° C
1.0
20
m A
Gate-to-Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.0
5.0
2.5
V
mV/ ° C
Drain-to-Source On Resistance
R DS(on)
V GS = 10 V
V GS = 4.5 V
I D = 4.0 A
I D = 3.5 A
34
50
48
70
m W
Forward Transconductance
g FS
V DS = 5.0 V, I D = 4.0 A
10
S
Gate Resistance
R G
2.4
3.6
W
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
C ISS
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
V GS = 0 V, f = 1.0 MHz,
V DS = 15 V
V GS = 4.5 V, V DS = 15 V,
I D = 4.0 A
280
60
32
2.8
0.4
1.2
360
80
42
4.2
pF
nC
Gate-to-Drain Charge
Q GD
1.0
Total Gate Charge
Q G(TOT)
V GS = 10 V, V DS = 15 V,
I D = 4.0 A
5.6
8.0
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
t d(ON)
6.0
12
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 10 V, V DS = 15 V,
I D = 1.0 A, R G = 6.0 W
6.5
14
1.4
13
26
7.0
ns
DRAIN-TO-SOURCE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V
T J = 25 ° C
0.8
1.0
V
I D = 1.3 A
T J = 125 ° C
0.65
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
t RR
t a
t b
Q RR
V GS = 0 V, d IS /d t = 100 A/ m s,
I S = 4.0 A
9.2
6.0
3.2
3.3
20
ns
nC
http://onsemi.com
2
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
NTMD5836NLR2G
MOSFET N-CH 40V 11A SO-8FL
NTMD5838NLR2G
MOSFET N-CH 40V 8.9A 8SOIC
NTMD6N02R2
MOSFET PWR N-CH DL 3.92A 20V 8SO
NTMD6N03R2
MOSFET PWR N-CH DL 6A 30V 8SOIC
NTMD6P02R2G
MOSFET PWR P-CHAN DUAL 20V 8SOIC
NTMFD4901NFT1G
MOSFET N-CH DUAL 30V 8DFN
NTMFS4108NT1G
MOSFET N-CHAN 22A 30V SO-8FL
NTMFS4119NT1G
MOSFET N-CHAN 18A 30V SO-8FL
相关代理商/技术参数
NTMD4N03
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 4 A, 30 V, Na??Channel SOa??8 Dual
NTMD4N03R2
功能描述:MOSFET 30V 4A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMD4N03R2G
功能描述:MOSFET 30V 4A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMD5836NL
制造商:ON Semiconductor 功能描述:MOSFET NN CH 40V 9/5.7A 8SOIC 制造商:ON Semiconductor 功能描述:MOSFET, NN CH, 40V, 9/5.7A, 8SOIC 制造商:ON Semiconductor 功能描述:MOSFET, NN CH, 40V, 9/5.7A, 8SOIC, Transistor Polarity:N Channel, Continuous Dra
NTMD5836NLR2G
功能描述:MOSFET NFET SO8-D 40V 10 25mOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMD5838NL
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 11.6 A, N?Channel, SO?8 Optimized Gate Charge
NTMD5838NLR2G
功能描述:MOSFET NFETDPAK40V100A3.7M OHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMD6601NR2G
功能描述:MOSFET NFET S08D 80V 1.4A 245mOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube